منابع مشابه
Electronic structure of intentionally disordered AlAs/GaAs superlattices.
We use realistic pseudopotentials and a plane-wave basis to study the electronic structure of non-periodic, three-dimensional, 2000-atom (AlAs)n/(GaAs)m (001) superlattices, where the individual layer thicknesses n,m ∈ {1, 2, 3} are randomly selected. We find that while the band gap of the equivalent (n = m = 2) ordered superlattice is indirect, random fluctuations in layer thicknesses lead to ...
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A brief review is given of recent positron studies of metal and semiconductor nanocrystals. The prospects offered by positron annihilation as a sensitive method to access nanocrystal (NC) properties are described and compared with other experimental methods. The tunability of the electronic structure of nanocrystals underlies their great potential for application in many areas. Owing to their l...
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1. Materials Science & Technology Division, Oak Ridge National Laboratory. Oak Ridge, TN, USA. 2. Department of Physics & Astronomy, Vanderbilt University. Nashville, TN, USA. 3. Department of Chemistry, University of Toronto. Toronto, Canada. 4. Departamento de Fisica Aplicada III, Universidad Complutense de Madrid. Madrid, Spain. 5. Department of Materials Science and Engineering, University ...
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ژورنال
عنوان ژورنال: American Journal of Condensed Matter Physics
سال: 2012
ISSN: 2163-1115
DOI: 10.5923/j.ajcmp.20120204.02